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dce92403e5
* add commitNonVolatileMemory overload to batch write chars n times to flash * changed uint8_t getEepromBuffer(uint16_t size) to uint8_t getEepromBuffer(uint32_t size) to allow eeprom > 65k * reworked PR #230
56 lines
1.5 KiB
C++
56 lines
1.5 KiB
C++
#include "arduino_platform.h"
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#include "Arduino.h"
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#ifdef ARDUINO_ARCH_SAMD
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#define PAGES_PER_ROW 4
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class SamdPlatform : public ArduinoPlatform
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{
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public:
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SamdPlatform();
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SamdPlatform( HardwareSerial* s);
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// unique serial number
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uint32_t uniqueSerialNumber() override;
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void restart();
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#ifdef USE_SAMD_EEPROM_EMULATION
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uint8_t* getEepromBuffer(uint32_t size);
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void commitToEeprom();
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#else
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// size of one EraseBlock in pages
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virtual size_t flashEraseBlockSize();
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// size of one flash page in bytes
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virtual size_t flashPageSize();
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// start of user flash aligned to start of an erase block
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virtual uint8_t* userFlashStart();
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// size of the user flash in EraseBlocks
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virtual size_t userFlashSizeEraseBlocks();
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// relativ to userFlashStart
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virtual void flashErase(uint16_t eraseBlockNum);
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// write a single page to flash (pageNumber relative to userFashStart
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virtual void flashWritePage(uint16_t pageNumber, uint8_t* data);
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// writes _eraseblockBuffer to flash - overrides Plattform::writeBufferedEraseBlock() for performance optimization only
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void writeBufferedEraseBlock();
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private:
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void init();
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uint32_t _MemoryEnd = 0;
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uint32_t _MemoryStart = 0;
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uint32_t _pageSize;
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uint32_t _rowSize;
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uint32_t _pageCnt;
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uint32_t getRowAddr(uint32_t flasAddr);
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void write(const volatile void* flash_ptr, const void* data, uint32_t size);
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void erase(const volatile void* flash_ptr, uint32_t size);
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void eraseRow(const volatile void* flash_ptr);
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#endif
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};
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#endif
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